Semiconductor devices having fin structures, and methods of forming semiconductor devices having fin structures

ABSTRACT

A semiconductor device including at least two fin structures on a substrate surface and a functional gate structure present on the at least two fin structures. The functional gate structure includes at least one gate dielectric that is in direct contact with at least the sidewalls of the two fin structures, and at least one gate conductor on the at least one gate dielectric. The sidewall of the gate structure is substantially perpendicular to the upper surface of the substrate surface, wherein the plane defined by the sidewall of the gate structure and a plane defined by an upper surface of the substrate surface intersect at an angle of 90°+/−5°. An epitaxial semiconductor material is in direct contact with the at least two fin structures.

CROSS REFERENCE TO RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No.13/448,749, filed Apr. 17, 2012 the entire content and disclosure ofwhich is incorporated herein by reference.

BACKGROUND

The present disclosure relates generally to semiconductor devices. Moreparticularly, the present disclosure relates to scaling of semiconductordevices.

In order to be able to make integrated circuits (ICs), such as memory,logic, and other devices, of higher integration density than currentlyfeasible, one has to find ways to further downscale the dimensions offield effect transistors (FETs), such as metal-oxide-semiconductor fieldeffect transistors (MOSFETs) and complementary metal oxidesemiconductors (CMOS). Scaling achieves compactness and improvesoperating performance in devices by shrinking the overall dimensions andoperating voltages of the device while maintaining the device'selectrical properties.

SUMMARY

A method of fabricating a semiconductor device is provided that, in oneembodiment, includes forming an epitaxial semiconductor material onsidewalls of at least one fin structure that is present on a dielectricsurface, wherein the at least one fin structure has a first compositionthat is different from a second composition of the epitaxialsemiconductor material. A replacement gate structure is then formed on achannel portion of the at least one fin structure. An interleveldielectric layer is then formed over an exposed portion of the at leastone fin structure, wherein the interlevel dielectric layer has an uppersurface that is coplanar with an upper surface of the replacement gatestructure. The replacement gate structure is then removed with an etchthat is selective to at least the at least one fin structure and theepitaxial semiconductor material, wherein removing the replacement gatestructure provides a first opening to the at least one fin structure. Anexposed portion of the epitaxial semiconductor material is removed withan anisotropic etch to provide a second opening that terminates on thedielectric surface. A functional gate structure is formed filling atleast a portion of the first opening and the second opening.

In another embodiment, a method of fabricating a semiconductor device isprovided that includes forming an epitaxial semiconductor material onsidewalls of at least one fin structure that is present on a dielectricsurface, wherein the at least one fin structure has a first compositionthat is different from a second composition of the epitaxialsemiconductor material. A replacement gate structure is then formed on achannel portion of the at least one fin structure. An interleveldielectric layer is then formed over an exposed portion of the at leastone fin structure, wherein the interlevel dielectric layer has an uppersurface that is coplanar with an upper surface of the replacement gatestructure. The replacement gate structure is then removed with an etchthat is selective to at least the at least one fin structure and theepitaxial semiconductor material, wherein removing the replacement gatestructure provides a first opening to the at least one fin structure. Anexposed portion of the epitaxial semiconductor material is removed withan anisotropic etch to provide a second opening that terminates on thedielectric surface. An isotropic etch is applied to the second openingthat etches the epitaxial semiconductor material and is selective to atleast the interlevel dielectric layer and the at least one finstructure, wherein the isotropic etch increases a width of the secondopening. A conformal dielectric layer having a first dielectric constantis applied to the second opening following by anisotropic etch. Afunctional gate structure is formed filling at least a portion of thefirst opening and the second opening, wherein the functional gatestructure includes a gate dielectric having a second dielectricconstant, wherein the second dielectric constant is greater than thefirst dielectric constant.

In another aspect, a semiconductor device is provided that includes atleast two fin structures, and a gate structure present on the at leasttwo fin structures. The gate structure includes at least one high-k gatedielectric that is in direct contact with at least sidewalls of the twofin structures, and at least one gate conductor on the at least onehigh-k gate dielectric. A dielectric spacer extends from a first finstructure to an adjacent fin structure and has an upper surface that issubstantially coplanar with an upper surface of the at least two finstructures. The dielectric spacer has a dielectric constant that is lessthan the dielectric constant of the high-k gate dielectric. Thedielectric spacer may also be in direct contact with the at least onehigh-k gate dielectric of the gate structure. An epitaxial semiconductormaterial is in direct contact with the at least two fin structures andis separated from the gate structure by the dielectric spacer.

In yet another embodiment, a method of fabricating a semiconductordevice is provided that includes epitaxially forming a sacrificialsemiconductor material on at least two fin structures. The sacrificialsemiconductor material may extend from a first sidewall of a first finstructure to a second sidewall of an adjacent fin structure of the atleast two fin structures. A replacement gate structure is formed on achannel portion of each of the at least two fin structures. Thesacrificial semiconductor material may be anisotropically etchedselectively to at least the replacement gate structure and the at leasttwo fin structures, wherein a remaining portion of the sacrificialsemiconductor material is present underlying the replacement gatestructure. A dielectric spacer is formed on the sidewalls of thereplacement gate structure and the remaining portion of the sacrificialsemiconductor material. The replacement gate structure and the remainingsemiconductor material may be removed to provide an opening to a channelportion to each of the at least two fin structures. A functional gatestructure may be formed in the opening to the channel portion of the atleast two fin structures.

In another aspect, a semiconductor device is provided that includes atleast two fin structures on a substrate and a functional gate structurepresent on the at least two fin structures. The functional gatestructure includes at least one gate dielectric that is in directcontact with at least the sidewalls of the two fin structures, and atleast one gate conductor on the at least one gate dielectric. Thesidewall of the functional gate structure is substantially perpendicularto the upper surface of the dielectric surface, wherein the planedefined by the sidewall of the functional gate structure and a planedefined by an upper surface of the substrate surface intersect at anangle of 90°+/−5°. An epitaxial semiconductor material is in directcontact with the at least two fin structures.

In another embodiment, a method of forming a semiconductor device isprovided that includes forming at least two fin structures comprised ofa first semiconductor material on a substrate, and epitaxially forming asacrificial semiconductor material of a second semiconductor material onthe at least two fin structures. The sacrificial semiconductor materialextends from a first sidewall of a first fin structure to a secondsidewall of an adjacent fin structure of the at least two finstructures. A replacement gate structure is formed on a channel portionof each of the at least two fin structures. The sacrificialsemiconductor material is anisotropically etched selectively to at leastthe replacement gate structure and the at least two fin structures,wherein a remaining portion of the sacrificial semiconductor material ispresent underlying the replacement gate structure. The at least two finstructures and the remaining portion of the sacrificial semiconductormaterial are then oxidized to form a first oxide on the remainingportion of the sacrificial semiconductor material and a second oxide onthe at least two fin structures. The first thickness of the first oxideis greater than the second thickness of the second oxide. The secondoxide may then be removed. An interlevel dielectric layer is then formedover an exposed portion of the at least one fin structure, wherein theinterlevel dielectric layer has an upper surface that is coplanar withan upper surface of the replacement gate structure. The replacement gatestructure and the remaining semiconductor material are removed toprovide an opening to a channel portion to each of the at least two finstructures. A functional gate structure is then formed in the opening tothe channel portion of the at least two fin structures.

In another aspect, a semiconductor device is provided, which in oneembodiment includes at least two fin structures and a gate structurethat is present on the at least two fin structures. The gate structureincludes at least one gate dielectric that is in direct contact with atleast the sidewalls of the two fin structures, and at least one gateconductor on the at least one gate dielectric. A dielectric spacer of agermanium-containing oxide extends from a first fin structure to anadjacent fin structure and has an upper surface that is substantiallycoplanar with an upper surface of the at least two fin structures. Thedielectric spacer is in direct contact with the at least one dielectricof the gate structure. An epitaxial semiconductor material may be indirect contact with the at least two fin structures and separated fromthe gate structure by the dielectric spacer.

DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

The following detailed description, given by way of example and notintended to limit the present disclosure solely thereto, will best beappreciated in conjunction with the accompanying drawings, wherein likereference numerals denote like elements and parts, in which:

FIG. 1 is a top down perspective view of four fin structures that arepresent on a substrate surface, in accordance with one embodiment of thepresent disclosure.

FIG. 2 is a side cross-sectional view across the fin structures depictedin FIG. 1 along section line a-a, in accordance with one embodiment ofthe present disclosure.

FIG. 3A is a side cross-sectional view across the fin structuresdepicted in FIG. 2 depicting forming an epitaxial semiconductor materialon the sidewalls of the fin structures that are present on the substratesurface, wherein the fin structures have a first composition that isdifferent from a second composition of the epitaxial semiconductormaterial, in accordance with one embodiment of the present disclosure.

FIG. 3B is a top down view of the fin structures depicted in FIG. 3A,wherein the epitaxial semiconductor material is present between adjacentfin structures.

FIG. 4A is a side cross-sectional view across the fin structure (alongsection line a-a depicted in FIG. 3B) depicting forming a replacementgate stack on the fin structures depicted in FIG. 3A, in accordance withone embodiment of the present disclosure.

FIG. 4B is a side cross-sectional view through the one of the finstructures (along section line b-b depicted in FIG. 3B) depictingpatterning the replacement gate stack depicted in FIG. 4A to form areplacement gate structure, in accordance with one embodiment of thepresent disclosure.

FIG. 4C is a side cross-sectional view through the epitaxialsemiconductor material (along section line c-c depicted in FIG. 3B) ofthe structure depicted in FIG. 4A, in accordance with one embodiment ofthe present disclosure.

FIG. 5A is a side cross-sectional view through one of the fin structures(along section line b-b depicted in FIG. 3B) depicting forming aninterlevel dielectric on the structure depicted in FIG. 4B, inaccordance with one embodiment of the present disclosure.

FIG. 5B is a side cross-sectional view through the epitaxialsemiconductor material (along section line c-c depicted in FIG. 3B)depicting forming an interlevel dielectric on the structure depicted inFIG. 4C, in accordance with one embodiment of the present disclosure.

FIG. 6A is a side cross-sectional view through one of the fin structures(along section line b-b depicted in FIG. 3B) depicting removing thereplacement gate structure from the structure depicted in FIG. 5A toprovide a first opening, in accordance with one embodiment of thepresent disclosure.

FIG. 6B is a side cross-sectional view through the epitaxialsemiconductor material (along section line c-c depicted in FIG. 3B)depicting removing the replacement gate structure from the structuredepicted in FIG. 5B, in accordance with one embodiment of the presentdisclosure.

FIG. 7 is a side cross-sectional view through the epitaxialsemiconductor material (along section line c-c depicted in FIG. 3B)depicting removing an exposed portion of the epitaxial semiconductormaterial from the structure depicted in FIG. 6B with an anisotropic etchto provide a second opening that terminates on the dielectric surface,in accordance with one embodiment of the present disclosure.

FIG. 8A is a side cross-sectional view across the fin structures (alongsection line a-a depicted in FIG. 3B) depicting forming a functionalgate structure in the first opening and the second opening to the finstructures, in accordance with one embodiment of the present disclosure.

FIG. 8B is a side cross-sectional view through one of the fin structures(along section line b-b depicted in FIG. 3B) of the structure depictedin FIG. 8A, in accordance with one embodiment of the present disclosure.

FIG. 8C is a side cross-sectional view through the epitaxialsemiconductor material (along section line c-c depicted in FIG. 3B) ofthe structure depicted in FIG. 8A, in accordance with one embodiment ofthe present disclosure.

FIG. 9 is a side cross-sectional view through the epitaxialsemiconductor material (along section line c-c depicted in FIG. 3B)depicting an isotropic etch applied to the second opening depicted inFIG. 7, wherein the isotropic etch increases a width of the secondopening, and depositing a conformal dielectric layer having a firstdielectric constant within the second opening, in accordance withanother embodiment of the present disclosure.

FIG. 10 is a side cross-sectional view through the epitaxialsemiconductor material (along section line c-c depicted in FIG. 3B)depicting forming a functional gate structure filling at least a portionof the first opening and the second opening that are depicted in FIG. 9,wherein the functional gate structure includes a gate dielectric havinga second dielectric constant that is greater than the first gatedielectric, in accordance with another embodiment of the presentdisclosure.

FIG. 11 is a side cross-sectional view through the sacrificialsemiconductor material (along section line c-c depicted in FIG. 3B)depicting another embodiment of the present disclosure that includesanisotropically etching the sacrificial semiconductor material depictedin FIG. 4C selectively to at least the replacement gate structure andthe fin structures, wherein a remaining portion of the sacrificialsemiconductor material is present underlying the replacement gatestructure.

FIG. 12A is a side cross-sectional view through the sacrificialsemiconductor material (along section line c-c as depicted in FIG. 3B)depicting forming a conformal dielectric layer on surfaces of thereplacement gate structure, the fin structures and the remaining portionof the sacrificial semiconductor material of the structure depicted inFIG. 11, in accordance with one embodiment of the present disclosure.

FIG. 12B is a side cross-sectional view through a fin structure of thestructure depicted in FIG. 12A (along section line b-b as depicted inFIG. 3B), in accordance with one embodiment of the present disclosure.

FIG. 13A is a side cross-sectional view through the sacrificialsemiconductor material (along section line c-c as depicted in FIG. 3B)depicting one embodiment of anisotropically etching the conformaldielectric layer that is depicted in FIG. 12A, wherein a first remainingportion of the conformal dielectric layer is present on the sidewalls ofthe replacement gate structure, the sidewalls of the fin structures, andsidewalls of the remaining portion of the sacrificial semiconductormaterial.

FIG. 13B is a side cross-sectional view through a fin structure of thestructure depicted in FIG. 13A (along section line b-b as depicted inFIG. 3B), in accordance with one embodiment of the present disclosure.

FIG. 14 is a side perspective view of a plurality of fin structures(from point D looking towards the end of the fin structures as depictedin FIG. 3B) depicting removing the first remaining portion of theconformal dielectric layer that is present on the sidewalls of the finstructures, wherein a second remaining portion of the conformaldielectric layer provides a dielectric spacer that is present on thesidewalls of the replacement gate structure and the sidewalls of theremaining portion of the sacrificial semiconductor material.

FIG. 15 is a side perspective view of a plurality of fin structures(from point d looking towards the end of the fin structures as depictedin FIG. 3B) depicting forming an epitaxial semiconductor material sourceand drain region extending from the first sidewall of a first finstructure to a second sidewall an adjacent fin structure.

FIG. 16A is a side cross-sectional view through the fin structure (alongsection line b-b as depicted in FIG. 3B) depicting one embodiment offorming an interlevel dielectric layer over an exposed portion of thefin structures, and removing the replacement gate structure and theremaining portion of the sacrificial semiconductor material selectivelyto the fin structures, the dielectric surface and the interleveldielectric layer.

FIG. 16B is a side cross-sectional view of the structure depicted inFIG. 16A through the portion previously occupied by the sacrificialsemiconductor material (along section line c-c as depicted in FIG. 3B),in accordance with one embodiment of the present disclosure.

FIG. 17A is a side cross-sectional view through the fin structure (alongsection line b-b as depicted in FIG. 3B) depicting forming a functionalgate structure in the first and second opening depicted in FIGS. 16A and16B that is provided by removing the replacement gate structure.

FIG. 17B is a side cross-sectional view of the structure depicted inFIG. 17A through the portion previously occupied by the sacrificialsemiconductor material (along section line c-c as depicted in FIG. 3B),in accordance with one embodiment of the present disclosure.

FIG. 18A is a side cross-sectional view through the sacrificialsemiconductor material (along section line c-c as depicted in FIG. 3B)depicting another embodiment of the present disclosure that includesoxidizing the remaining portion of the sacrificial semiconductormaterial depicted in FIG. 11 to form a first oxide having a greaterthickness than a second oxide that is present on the fin structures.

FIG. 18B is a side cross-sectional view of the structure depicted inFIG. 18A through one of the fin structures (along section line b-b asdepicted in FIG. 3B) depicting a second oxide that is formed on the finstructures, in accordance with one embodiment of the present disclosure.

FIG. 19 is a side cross-sectional view through one of the fin structures(along section line b-b as depicted in FIG. 3B) depicting removing thesecond oxide from the structure depicted in FIG. 18B.

FIG. 20A is a side cross-sectional view through one of the finstructures (along section line b-b as depicted in FIG. 3B) depicting oneembodiment of forming an epitaxial semiconductor material source anddrain region extending from the first sidewall of a first fin structureto a second sidewall an adjacent fin structure, and forming aninterlevel dielectric layer over an exposed portion of the finstructures depicted in FIG. 19.

FIG. 20B is a side cross-sectional view through the sacrificialsemiconductor material of the structure depicted in FIG. 20A (alongsection line c-c as depicted in FIG. 3B).

FIG. 21A is a side cross-sectional view through the fin structure (alongsection line B-B as depicted in FIG. 3B) depicting one embodiment ofremoving the replacement gate structure and the remaining portion of thesacrificial semiconductor material depicted in FIGS. 20 a and 20 b, andforming a functional gate structure.

FIG. 21B is a side cross-sectional view of the structure depicted inFIG. 21A the portion previously occupied by the sacrificialsemiconductor material (along section line c-c as depicted in FIG. 3B).

DETAILED DESCRIPTION

Detailed embodiments of the methods and structures of the presentdisclosure are described herein; however, it is to be understood thatthe disclosed embodiments are merely illustrative of the disclosedmethods and structures that may be embodied in various forms. Inaddition, each of the examples given in connection with the variousembodiments of the disclosure are intended to be illustrative, and notrestrictive. References in the specification to “one embodiment”, “anembodiment”, “an example embodiment”, etc., indicate that the embodimentdescribed may include a particular feature, structure, orcharacteristic, but every embodiment may not necessarily include theparticular feature, structure, or characteristic.

Further, the figures are not necessarily to scale, some features may beexaggerated to show details of particular components. Therefore,specific structural and functional details disclosed herein are not tobe interpreted as limiting, but merely as a representative basis forteaching one skilled in the art to variously employ the methods andstructures of the present disclosure. For purposes of the descriptionhereinafter, the terms “upper”, “lower”, “top”, “bottom”, andderivatives thereof shall relate to the disclosed structures, as theyare oriented in the drawing figures. The terms “overlying”, or“positioned on” means that a first element, such as a first structure,is present on a second element, such as a second structure, whereinintervening elements, such as an interface structure, e.g., interfacelayer, may be present between the first element and the second element.The term “direct contact” means that a first element, such as a firststructure, and a second element, such as a second structure, areconnected without any intermediary conducting, insulating orsemiconductor layers at the interface of the two elements.

The methods and structures disclosed herein are directed to threedimensional semiconductor devices, such as finFET semiconductor devicesand tri-gate semiconductor devices. FinFET and tri-gate semiconductordevices typically have three terminals, i.e., a functional gatestructure, a source region and a drain region. The functional gatestructure controls output current, i.e., flow of carriers in the channelregion. The channel region is the region between the source region andthe drain region of the transistor that becomes conductive when thetransistor is turned on. Typically and in a finFET, the functional gatestructure is in direct contact with the sidewall of a fin structure thatprovides the channel region of the semiconductor device. A fin structureis an island of semiconductor material that has a height that is greaterthan its width. A tri-gate semiconductor device is similar to a finFETsemiconductor device. The tri-gate semiconductor device differs from afinFET semiconductor device, because the functional gate structure ofthe tri-gate semiconductor device is in direct contact with the uppersurface and sidewall surfaces of the fin structure that contain thechannel region. In a finFET semiconductor device, a dielectric fin capthat is atop the fin structure obstructs the direct contact of thefunctional gate structure to the upper surface of the fin structure thatcontains the channel.

FinFET and tri-gate semiconductor devices may be suitable for increasedscaling of semiconductor devices, however the 3D geometry of FinFET andtri-gate semiconductor devices impose several integration challenges.For example, it has been determined that due to differences in thetopography of these devices, it is difficult to define a straight gateconductor with a same gate length at the top and bottom of the device.Further, replacement gate methods to form the functional gate structureto finFET and tri-gate semiconductor devices pose additional challenges.For example, in some instances, it can be difficult to remove thecomponents of the replacement gate structure from the space between thefin structures, and it can be difficult to form epitaxial semiconductormaterial in the source and drain regions to merge the fin structures.

It has been discovered that the aforementioned disadvantages result froma difference in topography between the upper surface of the finstructure and the substrate, e.g., dielectric surface, on which the finstructure is formed. In some embodiments, the methods and structures ofthe present disclosure overcome the aforementioned disadvantages, byforming an epitaxial semiconductor material, which may be sacrificial,between the fin structures before forming the replacement gatestructure. The epitaxial semiconductor material has an upper surfacethat is substantially coplanar with the upper surface of the finstructures. Therefore, a substantially planar surface, i.e., a surfacehaving minimized topography variation, is provided for a followingreplacement gate process.

FIGS. 1-8C depict one embodiment of a method of fabricating asemiconductor device that includes forming an epitaxial semiconductormaterial 10 on the sidewalls S1 of at least one fin structure 5 that ispresent on a dielectric surface 4, wherein the at least one finstructure 5 has a first composition that is different from a secondcomposition of the epitaxial semiconductor material 10. A replacementgate structure 15 is then formed on a channel portion of the at leastone fin structure 5. An interlevel dielectric layer is then formed overan exposed portion of the at least one fin structure 5, wherein theinterlevel dielectric layer 20 has an upper surface that is coplanarwith an upper surface of the replacement gate structure 15. Thereplacement gate structure 15 is then removed with an etch that isselective to at least the at least one fin structure 5 and the epitaxialsemiconductor material 10, wherein removing the replacement gatestructure 15 provides a first opening 25 to the at least one finstructure 5. An exposed portion of the epitaxial semiconductor material10 is removed with an anisotropic etch to provide a second opening 30that terminates on the dielectric surface 4. A functional gate structure35 may then be formed filling at least a portion of the first opening 25and the second opening 30. The details of this method are now describedin greater detail.

FIGS. 1 and 2 depict one embodiment of forming at least one finstructure 5 on a substrate surface 4. In the embodiment depicted inFIGS. 1 and 2, the substrate surface 4 that the at least one finstructure 5 is formed on is a dielectric surface that may be provided bythe buried dielectric layer of a semiconductor on insulator (SOI)substrate. In some embodiments, the substrate surface 4 does not have tobe a dielectric material. For example, in some embodiments that employ abulk semiconductor substrate, the substrate surface 4 may be composed ofa semiconductor material, such as silicon. Hereafter, the substratesurface 4 is referred to as a dielectric surface 4 in order to beconsistent with the embodiments depicted in the supplied figures.

Specifically, FIG. 1 is a top down perspective view of four finstructures 5 (hereafter referred to as fin structures 5) that arepresent on a dielectric surface 4, in which section line a-a is acrossthe fin structures 5, and section line b-b is through one of the finstructures 5. The term “across the fin structures” as used throughoutthe present disclosure corresponds to section line a-a in FIG. 1. Theterm “through the fin structures” as used throughout the presentdisclosure corresponds to section line b-b in FIG. 1. FIG. 2 is a sidecross-sectional view across the at least one fin structure 5, i.e.,across section line a-a depicted in FIG. 1, where fins are formed on adielectric surface. These fins can be formed by patterning and etchingof the semiconductor layer on a semiconductor-on-insulator (SOI)substrate. Alternatively, in the embodiments in which the fin structuresare formed on a bulk semiconductor substrate (not shown in the suppliedfigures), adjacent fin structures can be isolated from each other byregions of dielectric material that is formed in between the finstructures.

Referring to FIG. 2, the fin structures 5 and the dielectric surface 4that the fin structures 5 are present on may be formed from asemiconductor on insulator (SOI) substrate 1. The SOI substrate 1 mayinclude a base semiconductor layer 2 and a top semiconductor layer(which is interchangeably referred to as an SOI layer) that areelectrically isolated from each other by a buried dielectric layer. Inone embodiment, the SOI substrate 1 may be patterned and etched toprovide the initial structure depicted in FIG. 2, in which the SOI layerprovides the fin structures 5 and the buried dielectric layer providesthe dielectric surface 4.

The SOI layer and the base semiconductor layer 2 may comprise at leastone of Si, Ge, SiGe, GaAs, InAs, InP, SiCGe, SiC as well as other III/Vor II/VI compound semiconductors and alloys thereof. The SOI layer andbase semiconductor layer 2 may comprise the same or different materials.In one example, the SOI layer is monocrystalline. The buried dielectricmaterial separating the SOI layer and the base semiconductor layer 2 maybe a crystalline or non-crystalline oxide, nitride, oxynitride, or anyother suitable insulating material. The buried dielectric layer maycomprise a single layer of dielectric material or multiple layers ofdielectric materials. The buried dielectric layer may have a thicknessranging from 5 nm to 500 nm.

A photolithography and etch process sequence may be utilized to providethe fin structures 5 from the SOI substrate 1. Specifically and in oneexample, a photoresist mask is formed overlying the SOI layer of the SOIsubstrate 1 in which the portion of the SOI layer that is underlying thephotoresist mask provides the semiconductor body 6, and the portion ofthe SOI layer that is not protected by the photoresist mask is removedusing a selective etch process. To provide the photoresist mask, aphotoresist layer is first positioned atop the SOI layer. Thephotoresist layer may be provided by a blanket layer of photoresistmaterial that is formed utilizing for example, spin-on coating. Theblanket layer of photoresist material is then patterned to provide thephotoresist mask utilizing a lithographic process that may includeexposing the photoresist material to a pattern of radiation anddeveloping the exposed photoresist material utilizing a resistdeveloper. Following the formation of the photoresist mask, an etchingprocess may remove the unprotected portions of the SOI layer selectiveto the underlying buried dielectric layer. For example, the transferringof the pattern provided by the photoresist into the SOI layer mayinclude an anisotropic etch. An anisotropic etch process is a materialremoval process in which the etch rate in the direction normal to thesurface to be etched is greater than in the direction parallel to thesurface to be etched. The anisotropic etch may include reactive-ionetching (RIE). Other examples of anisotropic etching that can be used atthis point of the present invention include ion beam etching, plasmaetching or laser ablation.

In one embodiment, a hard mask dielectric layer may be deposited overthe SOI layer prior to the formation of the photoresist mask. The hardmask dielectric layer may be composed of a nitride or oxide, and may bereferred to as a fin dielectric cap 6. The hard mask dielectric layerand a two stage anisotropic etch may be utilized to transfer the patternfrom the photoresist mask into the SOI layer to provide the finstructures 5. More specifically, following the formation of thephotoresist mask, the two stage anisotropic etch may be conducted, inwhich a first selective etch removes the exposed portions of the hardmask dielectric layer, wherein the photoresist mask protects the portionof the hard mask dielectric layer that is present beneath thephotoresist mask to provide the dielectric fin cap 6 for each of the finstructures 5. The SOI layer that is beneath the protected remainingportions of the hard mask dielectric layer provides the fin structures 5of the subsequently formed device. The first stage of the anisotropicetch may continue until the portion of the hard mask dielectric layerexposed by the photoresist mask is removed to expose the SOI layer. In asecond stage of the two stage anisotropic etch, the exposed portions ofthe SOI layer are removed by an etch chemistry that removes the materialof the SOI layer selective to the buried insulating layer, i.e.,dielectric surface 4. During the second stage of the etch process, theremaining portion of the hard mask dielectric layer functions as an etchmask that protects the underlying portion of the SOI layer to providethe fin structures 5 from the SOI layer. During the second stage of theanisotropic etching, the exposed portion of the SOI layer is removed. Inone example, each of the fin structures 5 is composed of silicon (Si),and the dielectric fin cap 6 that is atop each of the fin structures 5is composed of silicon nitride or silicon oxide.

Each of the fin structures 5 may have a height H₁ ranging from 5 nm to200 nm. In one embodiment, each of the fin structures 5 may have heightH₁ ranging from 10 nm to 100 nm. In another embodiment, the each of thefin structures 5 may have a height H₁ ranging from 15 nm to 50 nm. Eachof the fin structures 5 may have a width W₁ ranging from 5 nm to 50 nm.In another embodiment, each of the fin structures 5 may have width W₁ranging from 8 nm to 20 nm. Adjacent fin structures 5 may be separatedby a pitch P1 ranging from 20 nm to 100 nm. In one embodiment, adjacentfin structures 5 may be separated by a pitch P1 ranging from 30 nm to 50nm.

It is noted that although the initial structure depicted in FIG. 2 isdescribed as being formed from an SOI substrate, embodiments of thepresent disclosure are contemplated that utilize a bulk semiconductorsubstrate. It is also noted that although FIG. 2 depicts four finstructures 5, the present disclosure is not limited to only thisembodiment, as any number of fin structures 5 may be present on thedielectric surface 4.

FIG. 3A depicts one embodiment of forming an epitaxial semiconductormaterial 10 on the sidewalls S1 of each of the fin structures 5. FIG. 3Ais a side cross-sectional view across the fin structures 5. Asemiconductor material that is referred to as being “epitaxial” is asemiconductor material that is formed using epitaxial growth and/ordeposition. The terms “epitaxial growth and/or deposition” and“epitaxially formed and/or grown” mean the growth of a semiconductormaterial on a deposition surface of a semiconductor material, in whichthe semiconductor material being grown has the same crystallinecharacteristics as the semiconductor material of the deposition surface.In an epitaxial deposition process, the chemical reactants provided bythe source gasses are controlled and the system parameters are set sothat the depositing atoms arrive at the deposition surface of thesemiconductor substrate with sufficient energy to move around on thesurface and orient themselves to the crystal arrangement of the atoms ofthe deposition surface. Therefore, an epitaxial semiconductor materialhas the same crystalline characteristics as the deposition surface onwhich it is formed. For example, an epitaxial semiconductor materialdeposited on a {100} crystal surface will take on a {100} orientation.In some embodiments, epitaxial growth and/or deposition processes areselective to forming on semiconductor surface, and do not depositmaterial on dielectric surfaces, such as silicon oxide or siliconnitride surfaces.

The fin structures 5 are typically composed of a semiconductor materialhaving a first composition that is different from a second compositionof the epitaxial semiconductor material 10. The second composition ofthe epitaxial semiconductor material 10 is typically selected to allowfor selective etching between the fin structures 5 and the epitaxialsemiconductor material 10. As used herein, the term “selective” inreference to a material removal process denotes that the rate ofmaterial removal for a first material is greater than the rate ofremoval for at least another material of the structure to which thematerial removal process is being applied. For example, in oneembodiment, a selective etch may include an etch chemistry that removesa first material selectively to a second material by a ratio of 10:1 orgreater. In one embodiment, when the second composition of the epitaxialsemiconductor material 10 is a germanium containing semiconductor, thefirst composition of the fin structures 5 is a silicon containingsemiconductor that does not include germanium. For example, thegermanium containing semiconductor that provides the epitaxialsemiconductor material 10 may be silicon germanium (SiGe) or germanium(Ge) and the silicon containing semiconductor that provides the finstructures is silicon (Si). In one embodiment, the epitaxialsemiconductor material 10 extends from the sidewall Si of one finstructure 5 to the sidewall S1 of an adjacent fin structure 5, and maybe referred to as a merging epitaxial semiconductor material.

In one embodiment, the epitaxial semiconductor material 10 may becomposed of germanium (Ge). A number of different sources may be usedfor the deposition of epitaxial germanium. In some embodiments, thegermanium containing gas sources for epitaxial growth include germane(GeH₄), digermane (Ge₂H₆), halogermane, dichlorogermane,trichlorogermane, tetrachlorogermane and combinations thereof.

In yet another embodiment, the epitaxial semiconductor material 10 iscomposed of a germanium-containing material, such as silicon germanium(SiGe). A number of different sources may be used for the deposition ofepitaxial silicon germanium. In some embodiments, the gas source for thedeposition of epitaxial SiGe may include a mixture of silicon containinggas sources and germanium containing gas sources. For example, anepitaxial layer of silicon germanium may be deposited from thecombination of a silicon gas source that is selected from the groupconsisting of silane, disilane, trisilane, tetrasilane,hexachlorodisilane, tetrachlorosilane, dichlorosilane, trichlorosilane,methylsilane, dimethylsilane, ethylsilane, methyldisilane,dimethyldisilane, hexamethyldisilane and combinations thereof, and agermanium gas source that is selected from the group consisting ofgermane, digermane, halogermane, dichlorogermane, trichlorogermane,tetrachlorogermane and combinations thereof. The germanium content ofthe epitaxial layer of silicon germanium may range from 5% to 90%, byatomic weight %. In another embodiment, the germanium content of theepitaxial layer of silicon germanium may range from 10% to 40%.

The temperature for epitaxial deposition process for forming theepitaxial semiconductor material 10 typically ranges from 550° C. to900° C. Although higher temperature typically results in fasterdeposition, the faster deposition may result in crystal defects and filmcracking.

In some embodiments, the epitaxial semiconductor material 10 providesthe source and drain regions of the subsequently formed semiconductordevice. As used herein, the term “source” is a doped region in thesemiconductor device, in which majority carriers are flowing into thechannel. As used herein, the term “drain” means a doped region insemiconductor device located at the end of the channel, in whichcarriers are flowing out of the transistor through the drain. Theconductivity of the source and drain regions typically dictates theconductivity type of the semiconductor device. In some embodiments, theepitaxial semiconductor material 10 may be doped with an n-type orp-type dopant using an in-situ doping method. By “in-situ” it is meantthat the dopant that dictates the conductivity type of the epitaxialsemiconductor material 10 is introduced during the process step, e.g.,epitaxial deposition, that forms the epitaxial semiconductor material.As used herein, “p-type” refers to the addition of impurities to anintrinsic semiconductor that creates deficiencies of valence electrons.In a type IV semiconductor (element of Group IV of the periodic table ofelements), such as silicon, germanium or silicon germanium, examples ofp-type dopants, i.e., impurities, include but are not limited to: boron,aluminum, gallium and indium. As used herein, “n-type” refers to theaddition of impurities that contributes free electrons to an intrinsicsemiconductor. In a type IV semiconductor, such as silicon, germanium orsilicon germanium, examples of n-type dopants, i.e., impurities, includebut are not limited to antimony, arsenic and phosphorous. Alternatively,the dopant that provides the conductivity type of the epitaxialsemiconductor material 10 is introduced by ion implantation during alater stage of method of forming the semiconductor device.

In one embodiment, the epitaxial semiconductor material 10 has a widthW2 ranging from 10 nm to 100 nm. In another embodiment, the width W2 ofthe epitaxial semiconductor material 10 ranges from 20 nm to 40 nm. Insome embodiments, the width W2 of the epitaxial semiconductor material10 is selected so that the epitaxial semiconductor material 10 extendsfrom the sidewall of a first fin structure 5 to the sidewall of anadjacent fin structure 5.

FIG. 3B is a top down view of the fin structures 5 depicted in FIG. 3A,in which section line c-c is through the epitaxial semiconductormaterial 10 and the arrow extending from point “d” indicates theperspective of a side view of the fin structures 5. The term “throughthe epitaxial semiconductor material” as used throughout the presentdisclosure is intended to correspond to section line c-c in FIG. 3B. Theterm “side view of the fin structures” as used throughout the presentdisclosure is intended to correspond to a perspective view of the finstructures from point “d” in the direction indicated by the arrow.

FIG. 4A is a side cross-sectional view across the fin structures 5depicting removing the dielectric fin cap 6 and forming a replacementgate stack 14 on the fin structures 5. The dielectric fin cap 6 may beremoved by a selective etch process. In one embodiment, the dielectricfin cap 6 is removed by an etch that is selective to the fin structures5, the epitaxial semiconductor material 10 and the dielectric surface 4.The etch process for removing the dielectric fin cap 6 may be ananisotropic, such as reactive ion etch (RIE), or an isotropic etch, suchas a wet chemical etch. In one embodiment, after removing the dielectricfin cap 6, the upper surface of the fin structures 5 is verticallyoffset from the upper surface of the epitaxial semiconductor material 10by a dimension ranging from 0 nm to 20 nm. In another embodiment, theupper surface of the fin structures 5 is vertically offset from theupper surface of the epitaxial semiconductor material 10 by a dimensionranging from 2 nm to 10 nm. In yet another embodiment, the upper surfaceof the fin structures 5 is vertically offset from the upper surface ofthe epitaxial semiconductor material 10 by a dimension ranging from 3 nmto 5 nm. In some embodiments, the dielectric fin cap 6 is removed toprovide a tri-gate semiconductor device, and in some embodiments thedielectric fin cap 6 is not removed and remains the in final devicestructure to provide a finFET semiconductor device.

Referring to FIG. 4A, in one embodiment, the replacement gate stack 14may include a sacrificial gate dielectric layer 11, a sacrificial gateconductor layer 12 and a sacrificial gate dielectric cap 13. Thesacrificial gate dielectric layer 11 may be composed of any dielectricmaterial, such as an oxide, nitride, or oxynitride material. In oneembodiment, the composition of the sacrificial gate dielectric layer 11is selected so that the sacrificial dielectric is removed by an etchthat is selective to the underlying fin structures 5. The sacrificialgate dielectric layer 11 may be formed using a deposition process, suchas chemical vapor deposition (CVD). The sacrificial gate dielectriclayer 11 may also be deposited using evaporation, chemical solutiondeposition, spin on deposition, and physical vapor deposition (PVD)methods, or may be formed using thermal growth methods. The sacrificialgate conductor layer 12 may be composed of a semiconductor-containingmaterial, such as a silicon-containing material, e.g., polycrystallinesilicon, single crystal silicon, polycrystalline silicon and silicongermanium. The sacrificial gate conductor layer 12 may be formed using adeposition process, such as CVD, evaporation, chemical solutiondeposition, spin on deposition, and PVD methods. The sacrificial gatedielectric cap 13 may be composed of an oxide, nitride or oxynitride,and may be formed using chemical vapor deposition (CVD), physical vapordeposition (PVD), thermal growth methods, or a combination thereof.

FIGS. 4B-4C depict one embodiment of patterning the replacement gatestack 14 to provide a replacement gate structure 15 on the channelportion of the fin structures 5. FIG. 4B is a side cross-sectional viewthrough the fin structure, and FIG. 4C is a side cross-sectional viewthrough the epitaxial semiconductor material. The replacement gatestructure 15 includes sacrificial material that defines the geometry ofa later formed functional gate structure that functions to switch thesemiconductor device from an “on” to “off” state, and vice versa.

In one embodiment, the replacement gate stack 14 depicted in FIG. 4A maybe patterned and etched to provide the replacement gate structure 15depicted in FIGS. 4B and 4C using photolithography and etch processes.In one embodiment, a pattern is produced by applying a photoresist tothe surface to be etched, exposing the photoresist to a pattern ofradiation, and then developing the pattern into the photoresistutilizing a resist developer. Once the patterning of the photoresist iscompleted, the sections covered by the photoresist are protected, whilethe exposed regions are removed using a selective etching process thatremoves the unprotected regions. In one embodiment, the etch processremoves the exposed portions of the replacement gate stack 14 with anetch chemistry that is selective to the fin structures 5 and theepitaxial semiconductor material 10. In one embodiment, the etch processthat forms the replacement gate structure 15 is an anisotropic etch. Theanisotropic etch may include reactive-ion etching (RIE). Other examplesof anisotropic etching that can be used include ion beam etching, plasmaetching or laser ablation. The remaining portion of the replacement gatestack that provides the replacement gate structure 15 is present on achannel portion of the fin structures 5.

FIGS. 5A and 5B depict one embodiment of forming an interleveldielectric 20 on the replacement gate structure 15, the epitaxialsemiconductor material 10 and the fin structures 5, and planarizing theinterlevel dielectric 20 so that an upper surface of the interleveldielectric 20 is coplanar with an upper surface of the replacement gatestructure 15. The interlevel dielectric 20 may be selected from thegroup consisting of silicon-containing materials such as SiO₂, Si₃N₄,SiO_(x)N_(y), SiC, SiCO, SiCOH, and SiCH compounds; the above-mentionedsilicon-containing materials with some or all of the Si replaced by Ge;carbon-doped oxides; inorganic oxides; inorganic polymers; hybridpolymers; organic polymers such as polyamides or SiLK™; othercarbon-containing materials; organo-inorganic materials such as spin-onglasses and silsesquioxane-based materials; and diamond-like carbon(DLC), amorphous hydrogenated carbon (α-C:H), or silicon boron nitride(SiBN). The interlevel dielectric layer 20 may be deposited using atleast one of spinning from solution, spraying from solution, chemicalvapor deposition (CVD), plasma enhanced CVD (PECVD), atomic layerdeposition (ALD), sputter deposition, reactive sputter deposition,ion-beam deposition, and evaporation. Following deposition of thedielectric material for the interlevel dielectric layer 20, aplanarization processes is conducted to provide a planar upper surface,wherein the upper surface of the interlevel dielectric layer 20 iscoplanar with the upper surface of the replacement gate structure 25.The planarization of the interlevel dielectric layer 20 may be providedby chemical mechanical planarization (CMP).

FIGS. 6A and 6B depict one embodiment of removing the replacement gatestructure 15 to provide a first opening 25 to the fin structures 5. FIG.6A is a side cross-sectional view through a fin structure 5, and FIG. 6Bis a side cross-sectional view through an epitaxial semiconductormaterial 10. In one embodiment, the replacement gate structure 15 may beremoved with an etch process. The etch process for removing thereplacement gate structure 15 may be a selective etch. The replacementgate structure 15 may be removed using a wet or dry etch process. In oneembodiment, the replacement gate structure 15 is removed by reactive ionetch (RIE). In one example, an etch step for removing the replacementgate structure 15 can include an etch chemistry for removing thereplacement gate structure 15 selective to the fin structures 5, theepitaxial semiconductor material 10, and the interlevel dielectric layer20.

FIG. 7 is a side cross-sectional view through a epitaxial semiconductormaterial 10 depicting removing an exposed portion of the epitaxialsemiconductor material 10 from the structure depicted in FIG. 6B with ananisotropic etch to provide a second opening 30 that terminates on thedielectric surface 4. The anisotropic etch for removing the exposedportion of the epitaxial semiconductor material 10 may be reactive ionetch (RIE). Other anisotropic etch processes that are suitable forremoving the exposed portion of the epitaxial semiconductor material 10include ion beam etching, plasma etching or laser ablation. In oneembodiment, the etch process for removing the epitaxial semiconductormaterial 10 removes the material of the epitaxial semiconductor material10 selectively to the interlevel dielectric layer 20 and fin structures5, wherein the etch process terminates on the dielectric surface 4.

FIGS. 8A-8C depict one embodiment of forming a functional gate structurein the first opening and the second opening to the fin structures 5.FIG. 8A is a side cross-sectional view across the fin structures 5, FIG.8B is a side cross-sectional view through the at least one fin structure5, and FIG. 8C is a side cross-sectional view through the epitaxialsemiconductor material 10. The functional gate structure 35 includes atleast one gate dielectric 36 and at least one gate conductor 37. The atleast one gate dielectric 36 of the functional gate structure 35 may becomposed of any dielectric material including oxides, nitrides andoxynitrides. In one embodiment, the at least one gate dielectric 36 maybe provided by a high-k dielectric material. The term “high-k” is usedto describe the material of the at least one gate dielectric 36 denotesa dielectric material having a dielectric constant greater than siliconoxide (SiO₂) at room temperature (20° C. to 25° C.) and atmosphericpressure (1 atm). For example, a high-k dielectric material may have adielectric constant greater than 4.0. In another example, the high-kgate dielectric material has a dielectric constant greater than 7.0. Inan even further example, the dielectric constant of the high-kdielectric material may be greater than 10.0. In one embodiment, the atleast one gate dielectric 36 is composed of a high-k oxide such as, forexample, HfO₂, ZrO₂, Al₂O₃, TiO₂, La₂O₃, SrTiO₃, LaAlO₃, Y₂O₃ andmixtures thereof. Other examples of high-k dielectric materials for theat least one gate dielectric 36 include hafnium silicate, hafniumsilicon oxynitride or combinations thereof. In one embodiment, the atleast one gate dielectric 36 may be deposited by chemical vapordeposition (CVD). Variations of CVD processes suitable for depositingthe at least one gate dielectric 36 include, but are not limited to,APCVD, LPCVD, PECVD, MOCVD, ALD, and combinations thereof.

In one embodiment, the at least one gate dielectric 36 may be depositedusing a conformal deposition method. The term “conformal layer” denotesa layer having a thickness that does not deviate from greater than orless than 20% of an average value for the thickness of the layer. The atleast one gate dielectric 36 may be deposited on the channel portion ofthe fin structures 5. The at least one gate dielectric 36 is also formedon the sidewalls of the first opening and the sidewalls of the secondopening that are define by the interlevel dielectric 20. In oneembodiment, the thickness of the at least one gate dielectric 36 isgreater than 0.8 nm. More typically, the at least one gate dielectric 36has a thickness ranging from about 1.0 nm to about 6.0 nm.

The at least one gate conductor 37 is formed on the at least one gatedielectric 36. The at least one gate conductor 37 may be formed by adeposition process, such as CVD, plasma-assisted CVD, plating, and/orsputtering, followed by planarization. In one embodiment, the at leastone gate conductor 37 is composed of metal or a doped semiconductor.Examples of metals that may be employed for the at least one gateconductor 37 may include, but is not limited to, W, Ni, Ti, Mo, Ta, Cu,Pt, Ag, Au, Ru, Ir, Rh, and Re, Al, TiN, WN, TaN, TiAlN, TaAlN, andalloys thereof. One example of a doped semiconductor that is suitablefor the at least one gate conductor 37 is doped polysilicon.

Referring to FIG. 8C, in one embodiment, the sidewall S2 of thefunctional gate structure 35 is substantially perpendicular to the uppersurface of the dielectric surface 4, wherein the plane defined by thesidewall S2 of the functional gate structure 35 and a plane defined byan upper surface of the dielectric surface 4 intersect at an angle α1 of90°+/−10°. In another embodiment, the plane defined by the sidewall S2of the functional gate structure 35 and a plane defined by an uppersurface of the dielectric surface 4 intersect at an angle α2 of90°+/−5°. In yet another embodiment, the plane defined by the sidewallS2 of the functional gate structure 35 and a plane defined by an uppersurface of the dielectric surface 4 intersect at an angle α2 of 90°.

In some embodiments, in which the epitaxial semiconductor material 10has not been doped prior to forming the functional gate structure 35 toprovide the source and drain regions of the semiconductor device, atleast a portion of the interlevel dielectric layer 20 may be removed toexpose a remaining portion of the epitaxial semiconductor material 10.Once the remaining portion of the epitaxial semiconductor material 10has been exposed, an n-type or p-type dopant may be implanted into theepitaxial semiconductor material using ion implantation to provide thesource and drain regions of the semiconductor device.

In some embodiments, in the method described with reference to FIGS.1-8C, in which the dielectric fin caps 6 are removed from the finstructures 5, the at least one functional gate dielectric 36 is indirect contact with a sidewall and an upper surface for each of the finstructures 5, and the semiconductor device that is formed by the methodis a tri-gate semiconductor device. In other embodiments, in the methoddescribed with reference to FIGS. 1-8C, in which the dielectric fin caps6 are not removed from the upper surface of the fin structures 5, thefunctional gate dielectric 36 is in direct contact with a sidewall foreach of the fin structures 5 and is separated from an upper surface foreach of the fin structures 5 by the dielectric fin caps 6, and thesemiconductor device is a finFET semiconductor device.

In another embodiment of the present disclosure, a low-k spacer isformed adjacent to the high-k gate dielectric of the functional gatestructure. The term “low” is used to describe the spacer that isadjacent to the gate dielectric of the functional gate structure denotesthat the spacer has a lower dielectric constant than the gatedielectric. In some embodiments, the low-k spacer reduces the parasiticcapacitance of the semiconductor device. One process sequence forforming the low-k spacer is depicted in FIGS. 1-6B in combination withFIGS. 9 and 10. In one embodiment, the method may begin with forming anepitaxial semiconductor material 10 on the sidewalls S1 of the finstructures 5 that are present on the dielectric surface 4, as depictedin FIG. 3A. As described above with reference to FIG. 3A, the finstructures 5 may have a first composition that is different from asecond composition of the epitaxial semiconductor material 10. Areplacement gate structure 15 may then be formed on a channel portion ofthe fin structures 5, as depicted in FIGS. 4A-4C. An interleveldielectric layer 20 is then formed over an exposed portion of the finstructures 5, wherein the interlevel dielectric layer 20 has an uppersurface that is coplanar with an upper surface of the replacement gatestructure 15, as depicted in FIGS. 5A and 5B. The replacement gatestructure 15 is then removed with an etch that is selective to the atleast one fin structure 5 and the epitaxial semiconductor material 10,wherein removing the replacement gate structure 15 provides a firstopening 25 to the fin structures 5, as depicted in FIG. 6A. An exposedportion of the epitaxial semiconductor material 10 is removed with ananisotropic etch to provide a second opening 30 that terminates on thedielectric surface 4, as depicted in FIG. 6B.

The above summation of the process steps depicted in FIGS. 1-6B is notintended to limit this embodiment to only the above description, becausethe entire process sequence of the previously described embodiments withreference to FIGS. 1-6B is applicable to the present embodiment. Forexample, each of the fin structures 5 that are employed in the methoddepicted in FIGS. 1-6B, 9 and 10 may include a dielectric fin cap 6 (asdepicted in FIG. 2) that is removed after forming the sacrificialsemiconductor material 10 (as depicted in FIG. 3A) and before formingthe replacement gate structure 15 (as depicted in FIGS. 4A-4C).

Referring to FIG. 9, an isotropic etch is applied to the second opening30 that is depicted in FIG. 6B to increase the width of the secondopening 30. Contrary to anisotropic etch processes, isotropic etching isnon-directional. The first width W3 is the width of the second openingbefore the isotropic etch process. The first width W3 is equal to thedesired gate length and can range anywhere between 5 nm to a fewmicrons, e.g., 1 micron, 2 microns, 3 microns, etc. The second width W4is the width of the second opening 30 after the isotropic etch process.In one embodiment, the second width W4 is greater than the first widthW3 by a dimension ranging from 2 nm to 10 nm. In another embodiment, thesecond width W4 is greater than the first width W3 by a dimensionranging from 4 nm to 8 nm.

In one embodiment, the isotropic etch process removes the epitaxialsemiconductor material 10 selectively to the interlevel dielectric layer20 and the fin structures 5. By etching the epitaxial semiconductormaterial 10 selectively to the interlevel dielectric layer 20 and finstructures 5, an undercut region is formed underlying the interleveldielectric layer 20. In one embodiment, where the epitaxialsemiconductor 10 is composed of SiGe and the fin structures 5 iscomposed of Si, the isotropic etch for increasing the width of thesecond opening may include wet etching using a mixture of hydrogenperoxide (H2O2), ammonium hydroxide (NH4OH) and water, wet etching usinghydrogen peroxide, or dry etching in HCl ambient.

Referring to FIG. 9, a conformal dielectric layer 40 having a firstdielectric constant is applied to the second opening 30 following theisotropic etch. The dielectric constant of the conformal dielectriclayer 40 is typically less than the subsequently formed functional gatedielectric layer to reduce the parasitic capacitance that is formed inthe semiconductor device. For example, when the functional gatedielectric layer of the subsequently formed functional gate structure isa high-k gate dielectric, such as hafnium oxide (HfO₂), the conformaldielectric layer 40 may be composed of a lower-k dielectric, such assilicon oxide (SiO₂), silicon nitride (SiN), or silicon oxynitride.

In one embodiment, a low-k dielectric of the conformal dielectric layer40 is a dielectric material having a dielectric constant ranging from 2to 9, and a high-k dielectric of the subsequently formed functional gatedielectric is a dielectric material having a dielectric constant rangingfrom 10 to 40. In another embodiment, the low-k dielectric of theconformal dielectric layer 40 is a dielectric material having adielectric constant that ranges from 3 to 7, and the high-k dielectricmaterial of the subsequently formed functional gate dielectric has adielectric constant that ranges from 10 to 25. The dielectric constantsdiscussed herein are at room temperature, e.g., 20° C. to 25° C., andatmospheric pressure (1 atm).

The conformal dielectric layer 40 may be formed using a depositionprocess, such as chemical vapor deposition (CVD), e.g., plasma enhancedchemical vapor deposition (PECVD), or atomic layer deposition (ALD). Thethickness of the conformal dielectric layer 40 may be selected to atleast fill the undercut regions formed by the isotropic etch thatincreased the width of the second opening 30 to the second width W2. Theportions of the conformal dielectric layer 40 that are present in theundercut regions are present in a lower portion of the second opening30, and are in direct contact with the remaining portion of theepitaxial semiconductor material 10. The conformal dielectric layer 40may also be deposited on the upper surface of the interlevel dielectriclayer 20 and the sidewall surfaces of the interlevel dielectric layer 20that provide the upper portion of the second opening 30, as well as thebase of the second opening 30 that is provided by the dielectric surface4. In one embodiment, the conformal dielectric layer 40 has a thicknessranging from 2 nm to 10 nm. In another embodiment, the conformaldielectric layer 40 has a thickness ranging from 2 nm to 5 nm.

Referring to FIG. 10, in one embodiment, an anisotropic etch, such asreactive ion etch (RIE), may remove the portions of the conformaldielectric layer 40 that are present on the upper surface of theinterlevel dielectric layer 20, the sidewall surfaces of the interleveldielectric layer 20 that provide the upper portion of the second opening30, and the base of the second opening 30 that is provided by thedielectric surface 4. In one embodiment, the anisotropic etch beingapplied to the conformal dielectric layer 40 is selective to theinterlevel dielectric layer 20, the dielectric surface 4, and the finstructures 5. The remaining portion of the conformal dielectric layer 40is present in the undercut regions, and provides the low-k spacer 45that is present adjacent to the subsequently formed high-k functionalgate dielectric of the functional gate structure. In some embodiments,because the conformal dielectric layer 40 is present in the undercutregions, and the etch process is an anisotropic etch, the portion of theconformal dielectric layer 40 that is present in the undercut regions isprotected from being removed by the overhanging portion of theinterlevel dielectric layer 20. In one embodiment, the low-k spacer 45has a width ranging from 2 nm to 10 nm. In another embodiment, the low-kspacer 45 has a width ranging from 2 nm to 5 nm.

FIG. 10 further depicts forming a functional gate structure 35 fillingat least a portion of the second opening 30 that is depicted in FIG. 9,as well as the second opening to the fin structures. FIG. 10 is a sidecross-sectional view through the epitaxial semiconductor material 10.The functional gate structure 35 includes at least one functional gatedielectric 36 and at least one functional gate conductor 37. In someembodiments, the functional gate dielectric 36, e.g., high-k gatedielectric, has a dielectric constant that is greater than thedielectric constant of the low-k spacer 45. The functional gatestructure 35 including the at least one functional gate conductor 37 andthe at least one functional gate dielectric 36 that is depicted in FIG.10 is similar to the functional gate structure 35 that is describedabove with reference to FIGS. 8A-8C. Therefore, the method of formingthe functional gate structure 35 and the description of its componentsthat is described above with reference to FIGS. 8A-8C, is suitable forthe functional gate structure 35 that is depicted in FIG. 10, with theexception that in the structure depicted in FIG. 10, the functional gatestructure 35 is in direct contact with the low-k spacer 45. In oneembodiment, the low-k spacer 45 extends between the sidewalls of theadjacent fin structures 5 and separates the remaining portion of theepitaxial semiconductor material 10 from the functional gate structure35. The low-k spacer 45 has an upper surface that is substantiallycoplanar with an upper surface of the fin structures 5. The term“substantially coplanar” as used to describe the upper surface of thefin structures 5 and the upper surface of the low-k spacer 45 is meantto denote that the vertical offset between the upper surface of the finstructures 5 and the upper surface of the low-k spacer 45 may be nogreater than 5 nm.

In some embodiments, in the method described with reference to FIGS.1-6B, 9 and 10, in which the dielectric fin caps 6 are removed from thefin structures 5, the at least one functional gate dielectric 36 is indirect contact with a sidewall and an upper surface for each of the finstructures 5, and the semiconductor device that is formed by the methodis a tri-gate semiconductor device. In other embodiments, in the methoddescribed with reference to FIGS. 1-6B, 9 and 10, in which thedielectric fin caps 6 are not removed from the upper surface of the finstructures 5, the at least one functional gate dielectric 36 is indirect contact with a sidewall for each of the fin structures 5 and isseparated from an upper surface for each of the fin structures 5 by thedielectric fin cap 6. In this embodiment, the semiconductor device is afinFET semiconductor device.

Another embodiment of the present disclosure is provided by a processsequence that is depicted by FIGS. 1-4C in combination with FIGS.11-17B, in which a sacrificial semiconductor material 10 may be employedto overcome the difficulties of topography variations in the manufactureof semiconductor devices including fin structures. The variations intopography of fin structures can result in functional gate structureshaving a tapered sidewall. The methods and structures disclosed herein,which may employ the sacrificial semiconductor material 10 to reduce finstructure topography, can form functional gate structures havingperpendicular sidewalls.

In one embodiment, a method of fabricating a semiconductor device isprovided that may begin with epitaxially forming an epitaxialsemiconductor material 10 (hereafter referred to as a sacrificialsemiconductor material 10) on at least two fin structures 5, in whichthe sacrificial semiconductor material 10 at least extends from a firstsidewall of a first fin structure 5 to a second sidewall an adjacent finstructure 5, as described above with reference to FIG. 3A. Thesacrificial semiconductor material 10 may have a different compositionthan the fin structures 5. For example, the sacrificial semiconductormaterial 10 may be composed of a germanium containing semiconductormaterial, such as germanium (Ge) or silicon germanium (SiGe), and eachof the fin structures 5 may be composed of a silicon containingsemiconductor material that does not include germanium, such as silicon(Si). Typically, in this embodiment, the sacrificial semiconductormaterial 10 is not doped. Referring to FIGS. 4A-4C, a replacement gatestructure 15 may then be formed on a channel portion of each of the finstructures 5. The above summation of the process steps depicted in FIGS.1-4C is not intended to limit this embodiment to only the abovedescription, because the entire process sequence that is described forthe pervious embodiments with reference to FIGS. 1-4C is applicable tothe present embodiment. For example, each of the fin structures 5 thatare employed in the method depicted in FIGS. 1-4C and 11-17 may includea dielectric fin cap 6 (as depicted in FIG. 2) that is removed afterforming the sacrificial semiconductor material 10 (as depicted in FIG.3A) and before forming the replacement (as depicted in FIGS. 4A-4C).

FIG. 11 depicts one embodiment of anisotropically etching thesacrificial semiconductor material 10 that is depicted in FIG. 4C withan etch chemistry that is selective to at least the replacement gatestructure 15 and the fin structures 5. FIG. 11 is a side cross-sectionalview through the sacrificial semiconductor material 10. In oneembodiment, a remaining portion of the sacrificial semiconductormaterial 10 is present underlying the replacement gate structure 15. Inone embodiment, the anisotropic etch for removing the exposed portionsof the sacrificial semiconductor material 10 may be reactive ion etch(RIE). Other anisotropic etch methods that can be used at this point ofthe present disclosure include ion beam etching, plasma etching or laserablation. In one embodiment, the anisotropic etch process for removingthe exposed portion of the sacrificial semiconductor material 10 may beselective to the sacrificial gate cap dielectric layer 13, the finstructures 5, and the dielectric surface 4. In some embodiments, becausethe replacement gate structure 15 functions as an etch mask, thesidewalls of the remaining portion of the sacrificial semiconductormaterial 10 that are shaped by the anisotropic etch are aligned to thesidewalls of the overlying replacement gate structure 15.

FIGS. 12A-14 depict one embodiment of forming a dielectric spacer 50 onsidewalls of the replacement gate structure 15 and the remaining portionof the sacrificial semiconductor material 10. FIGS. 12A and 12B depictone embodiment of depositing a conformal dielectric layer 47 on surfacesof the replacement gate structure 15, the dielectric surface 4, theremaining portion of the sacrificial semiconductor material 10, and thefin structures 5. FIG. 12A is a side cross-sectional view through thesacrificial semiconductor material 10, and FIG. 12B is a sidecross-sectional through one of the fin structures 5.

The conformal dielectric layer 47 may be composed of any dielectricmaterial including oxides, nitrides and oxynitride dielectric materials.In one example, the conformal dielectric layer 47 is composed of siliconnitride (SiN), silicon boron nitride (SiBN), or SiCBN. The conformaldielectric layer 47 may be formed using a deposition process, such aschemical vapor deposition (CVD), e.g., plasma enhanced chemical vapordeposition (PECVD) or atomic layer deposition (ALD). In one embodiment,the conformal dielectric layer 47 has a thickness ranging from 2 nm to15 nm. In another embodiment, the conformal dielectric layer 47 has athickness ranging from 3 nm to 10 nm.

FIGS. 13A and 13B depict one embodiment of anisotropically etching theconformal dielectric layer 47, wherein a first remaining portion of theconformal dielectric layer that provides the dielectric spacer 50 ispresent on the sidewalls of the replacement gate structure 15, thesidewalls of the fin structures 5, and the sidewalls of the remainingportion of the sacrificial semiconductor material 10. FIG. 13A is a sidecross-sectional view through the sacrificial semiconductor material 10,and FIG. 13B is a side cross-sectional view through one of the finstructures 5. Examples of anisotropic etch processes that can be appliedto the conformal dielectric layer 47 include reactive ion etching (RIE),ion beam etching, plasma etching, laser ablation or a combinationthereof. Referring to FIGS. 12A-13B, due to the anisotropic nature ofthe etch, the lesser vertical thickness V1 of the conformal dielectriclayer 47 that is present on the horizontal surfaces of the upper surfaceof the replacement gate structure 15, the upper surface of the finstructures 5, and the upper surface of the dielectric surface 4 areremoved, while the greater vertical thickness V2 of the conformaldielectric layer 47 that is present on the sidewalls of the finstructures 5, the sidewalls of the remaining portion of the sacrificialsemiconductor material 10, and the sidewalls of the replacement gatestructure 15 remain to provide the dielectric spacer 50.

The anisotropic etch process may be a timed etch process, and may beterminated using endpoint detection techniques. In some embodiments, aremaining portion of the conformal dielectric layer 47 may be removedfrom the edges of the at least two fin structures 5. The remainingportion of the conformal dielectric layer 47 may be removed from theedges of the at least two fin structures 5 using angled ion implantationto damages the portion of the conformal dielectric layer 47 that ispresent on the edges of the at least two fin structures 5 followed by awet etch process. The wet etch process removes the damaged portion ofthe conformal dielectric layer 47 that is present on the edges of the atleast two fin structures 5. The wet etch process may be an etch that isselective to the fin structures 5. FIG. 14 is a side perspective view ofa plurality of fin structures 5 looking toward the exposed end, i.e.,edges, of the at least two fin structures 5 following removal of damagedportion of the conformal dielectric layer that was present on the edgesof the fin structures 5. FIG. 14 is a side perspective view of the edgesof the fin structures 5 towards the end of the fin structures 5 depictedin FIG. 3B. In some embodiments, the dielectric spacer 50 can cover thesacrificial semiconductor material 10.

FIG. 15 depicts one embodiment of forming epitaxial semiconductormaterial source and drain regions 55 on the exposed sidewalls of the finstructures 5. FIG. 15 is a side perspective view towards the end of thefin structures 5 from the perspective of point “d” as depicted in FIG.3B. The epitaxial semiconductor material source and drain regions 55 areseparated from the replacement gate structure 15 and the remainingportion of the sacrificial semiconductor material 10 by the dielectricspacer 50. The epitaxial semiconductor material source and drain regions55 are formed using an epitaxial growth process that is similar to theepitaxial growth process that is described above for forming theepitaxial semiconductor material 10 with reference to FIG. 3. Therefore,the description of the epitaxial semiconductor material 10 that isdepicted in FIG. 3 is suitable for forming the epitaxial semiconductormaterial source and drain regions 55 that are depicted in FIG. 15. Forexample, the epitaxial semiconductor material source and drain regions55 may be composed of silicon (Si), silicon germanium (SiGe), germanium(Ge), silicon germanium doped with carbon (SiGe:C) and silicon dopedwith carbon (Si:C). The epitaxial semiconductor material source anddrain regions 55 may be in-situ doped with an n-type or p-type dopant,or the epitaxial semiconductor material source and drain regions 55 maybe doped with an n-type or p-type dopant using ion implantation. In someembodiments, the epitaxial semiconductor material source and drainregions 55 may extend from the sidewall of a first fin structure 5 tothe sidewall of an adjacent fin structure 5, and may be referred to as a“merged” epitaxial semiconductor material source and drain region 55. Insome embodiments, the dielectric spacer 50 can cover the sacrificialsemiconductor material 10.

FIGS. 16A and 16B depict one embodiment of forming an interleveldielectric layer 60 over an exposed portion of the fin structures 5, andremoving the replacement gate structure 15 and the remaining portion ofthe sacrificial semiconductor material 10 selectively to the finstructures 5, the dielectric surface 4 and the interlevel dielectriclayer 60. FIG. 16A is a side cross-sectional view through one of the finstructures 5, and FIG. 16B is a side cross-sectional through the portionof the structure from which the remaining portion of the sacrificialsemiconductor material 10 was removed. The interlevel dielectric layer60 that is depicted in FIGS. 16A and 16B is similar to the interleveldielectric layer 20 that is described above with reference to FIGS. 5Aand 5B. Therefore, the above description of the interlevel dielectriclayer 20 that is depicted in FIG. 3A is suitable for the interleveldielectric layer 60 that is depicted in FIGS. 16A and 16B.

In some embodiments, following the formation of the interleveldielectric layer 60, the replacement gate structure is removed to form afirst opening 65 to the fin structures 5 and to expose the remainingportion of the sacrificial semiconductor material 10. The replacementgate structure may be removed with an etch that is selective to the finstructures 5, the dielectric spacer 50 and the interlevel dielectriclayer 60. In some embodiments, after removing the replacement gatestructure, the remaining portion of the sacrificial semiconductormaterial 10 may be removed to provide a second opening 70. The secondopening 70 may expose a portion of the dielectric surface 4. In oneembodiment, the remaining portion of the sacrificial semiconductormaterial 10 may be removed with an etch that is selective to the atleast two fin structures 5, the dielectric spacer 50, the dielectricsurface 4 and the interlevel dielectric layer 60. The etch process forremoving the remaining portion of the sacrificial semiconductor material10 may be an anisotropic etch, such as reactive ion etch (RIE), or maybe an isotropic etch, such as a wet chemical etch.

FIGS. 17A and 17B depict one embodiment of forming a functional gatestructure 75 in the first opening 65 and the second opening 70. FIG. 17Ais a side cross-sectional view through one of the fin structures 5, andFIG. 17B is a side cross-sectional view through the region of thesemiconductor device from which the remaining portion of the sacrificialsemiconductor material was removed to provide the second opening 70. Thefunctional gate structure 75 including the at least one functional gatedielectric 76 and the at least one functional gate conductor 77 that isdepicted in FIGS. 17A and 17B is similar to the functional gatestructure 35 including the at least one functional gate dielectric 36and the at least one functional gate conductor 77 that is describedabove with reference to FIGS. 8A-8C. Therefore, the description of thefunctional gate structure 35 that is depicted in FIGS. 8A-8C is suitablefor the functional gate structure 75 depicted in FIGS. 17A and 17B. Inone embodiment, the dielectric spacer 50 separates the functional gatestructure 75 that is depicted in FIG. 17B from the epitaxialsemiconductor material source and drain regions 55. Referring to FIG.17B, in one embodiment, the sidewall S3 of the functional gate structure75 is substantially perpendicular to the upper surface of the dielectricsurface 4, wherein the plane defined by the sidewall S3 of thefunctional gate structure 75 and a plane defined by an upper surface ofthe dielectric surface 4 intersect at an angle α2 of 90°+/−10°. Inanother embodiment, the plane defined by the sidewall S3 of thefunctional gate structure 75 and a plane defined by an upper surface ofthe dielectric surface 4 intersect at an angle α2 of 90°+/−5°. In yetanother embodiment, the plane defined by the sidewall S3 of thefunctional gate structure 75 and a plane defined by an upper surface ofthe dielectric surface 4 intersect at an angle α2 of 90°.

In some embodiments, in the method described with reference to FIGS.1-4C and FIGS. 11-17B, in which the dielectric fin caps 6 are removedfrom the fin structures 5, the at least one functional gate dielectric76 is in direct contact with a sidewall and an upper surface for each ofthe fin structures 5, and the semiconductor device that is formed by themethod is a tri-gate semiconductor device. In other embodiments, in themethod described with reference to FIGS. 1-4C and FIGS. 11-17B, in whichthe dielectric fin caps 6 are not removed from the upper surface of theat least two fin structures 5, the at least one functional gatedielectric 76 is in direct contact with a sidewall for each of the finstructures 5 and is separated from an upper surface for each of the finstructures 5 by the dielectric fin cap. In this embodiment, thesemiconductor device is a finFET semiconductor device.

In another embodiment of the present disclosure, a sacrificialsemiconductor material 10 that is epitaxially grown on the sidewalls ofthe fin structures 5 is used to form a spacer 80 that is present only onthe sidewalls of the functional gate structure 90, and is not present onthe sidewalls of the fin structures 5, as depicted in FIGS. 1-4C, 11,and 18A-21B. Referring to FIGS. 1-4C, the method may begin with formingfin structures 5 comprised of a first semiconductor material on adielectric surface 4, epitaxially forming a sacrificial semiconductormaterial 10 of a second semiconductor material on the fin structures 5,and forming a replacement gate structure 15 on a channel portion of eachof the fin structures 5. FIG. 11 further depicts anisotropically etchingthe sacrificial semiconductor material 10 that is depicted in FIG. 4C.The etch process for anisotropically etching the sacrificialsemiconductor material 10 may be selective to at least the replacementgate structure 15 and the fin structures 5 so that a remaining portionof the sacrificial semiconductor material 10 is present underlying thereplacement gate structure 15. The above summation of the process stepsdepicted in FIGS. 1-4C and 11 is not intended to limit this embodimentto only the summarized content, because the entire process sequence forthe previously described embodiments with reference to FIGS. 1-4C and 11is applicable to the present embodiment.

FIGS. 18A and 18B depict one embodiment of oxidizing the remainingportion of the sacrificial semiconductor material 10 depicted in FIG. 11to form a first oxide 79 having a first thickness T1 (as measured fromthe sidewall S4 of the remaining portion of the sacrificialsemiconductor material 10) on the remaining portion of the sacrificialsemiconductor material 10 having a greater thickness than a second oxide78 having a second thickness T2 that is present on the fin structures 5.FIG. 18A is a side cross sectional view through the remaining portion ofthe sacrificial semiconductor material 10, and FIG. 18B is a side crosssectional view through one of the fin structures 5.

The difference in the thickness between the first oxide 79 that isdepicted in FIG. 18A, and the second oxide 78 that is depicted in FIG.18B, is a function of the oxidation process and the difference betweenthe composition of the sacrificial semiconductor material 10 and the finstructures 5. For example, when the sacrificial semiconductor material10 is composed of silicon germanium (SiGe) and the fin structures 5 arecomposed of silicon (Si), the greater oxidation rate of the silicongermanium (SiGe) of the sacrificial semiconductor material 10 incomparison to the oxidation rate of the silicon (Si) of the finstructures 5 results in a first oxide 79 on the sacrificialsemiconductor material 10 with a greater thickness than the second oxide80 on the fin structures 5.

The oxidation process that is applied to the fin structures 5 and thesacrificial semiconductor material 10 may be any thermal oxidationprocess. Annealing for thermal oxidation may include furnace annealing,rapid thermal annealing and combinations thereof. In some embodiments,thermal oxidation may be carried out at a temperature ranging from 800°C. to 1100° C. for a time period of from 10 seconds to 2 hours in anoxygen containing ambient. In one embodiment, the ambient for thermaloxidation employed includes an oxygen-containing gas, such as O₂, air,ozone, NO, NO₂ and other like oxygen-containing gases. Mixtures of theaforementioned oxygen-containing gases are also contemplated herein. Theoxygen-containing gas may be used alone, or it may be admixed with aninert gas such as He, Ar, N₂, Kr, Xe or mixtures thereof.

Referring to FIG. 18A, in one embodiment, the first oxide 79 that isformed on the sacrificial semiconductor material 10 may be a germaniumcontaining oxide. For example, the sacrificial semiconductor material 10may be composed of silicon (Si), germanium (Ge) and oxygen (O). In oneembodiment, the silicon content may range from 20 at. % to 33 at. %, thegermanium content may range from 0 at. % to 20 at. %, and the oxygencontent may range from 60 at. % to 67 at. %. In another embodiment, thesilicon content may range from 25 at. % to 33 at. %, the germaniumcontent may range from 0 at. % to 10 at. %, and the oxygen content mayrange from 65 at. % to 67 at. %. The thickness of the first oxide 79 mayrange from 5 nm to 20 nm. In another embodiment, the thickness of thefirst oxide 79 may range from 5 nm to 10 nm.

Referring to FIG. 18B, in one embodiment, the second oxide 78 that isformed on the fin structures 5 may be silicon oxide. The silicon contentmay range from 25 at. % to 33 at. %, and the oxygen content may rangefrom 60 at. % to 67 at. %. The second oxide 78 typically does notcontain germanium (Ge). The thickness of the second oxide 78 may rangefrom 2 nm to 10 nm. In another embodiment, the thickness of the secondoxide 78 may range from 2 nm to 5 nm.

FIG. 19 is a side cross-sectional view through one of the fin structures5 depicting one embodiment of removing the second oxide 78 from thestructure depicted in FIG. 18B. In one embodiment, the etch process forremoving the second oxide 78 is selective to at least the fin structures5. In some embodiments, the etch process for removing the second oxide78 may also be selective to the replacement gate structure 15 and thedielectric surface 4. The etch process for removing the second oxide 78may be an isotropic etch process, such as wet etch in an HF containingsolution. The etch process for removing the second oxide 78 is typicallya timed etch. Because of the greater thickness of the first oxide 79,the second oxide 78 may be removed in its entirety while at least aportion of the first oxide 79 remains to provide the spacer 80 that ispresent on the sidewalls of the subsequently formed functional gatestructure, as depicted in FIGS. 20B and 21B. The removed thickness fromthe first oxide 79, i.e., amount etched, that results from the etchprocess that removes the second oxide 78 may range from 2 nm to 10 nm.In one embodiment, the removed thickness from the first oxide 79, i.e.,amount etched, that results from the etch process that removes thesecond oxide 78 may range from 2 nm to 5 nm.

FIGS. 20A and 20B depict one embodiment of forming an epitaxialsemiconductor material source and drain region 85 extending from a firstsidewall of a first fin structure 5 to a second sidewall an adjacent finstructure 5, and forming an interlevel dielectric layer 90 over anexposed portion of the fin structures 5 depicted in FIG. 19. FIG. 20A isa side cross-sectional view through one of the fin structures 5 and FIG.20B is a side cross-sectional view through the sacrificial semiconductormaterial 10. The epitaxial semiconductor material source and drainregions 85 are similar to the epitaxial semiconductor material sourceand drain regions 55 that are described with reference to FIG. 15.Therefore, the description of the epitaxial semiconductor materialsource and drain regions 55 that are depicted in FIG. 15 is suitable forthe epitaxial semiconductor material source and drain regions 85 thatare depicted in FIGS. 20A and 20B. The interlevel dielectric layer 90 issimilar to interlevel dielectric layer 20 that is depicted in FIG. 3A.Therefore, the above description of the interlevel dielectric layer 20that is depicted in FIG. 3A is suitable for the interlevel dielectriclayer 90 that is depicted in FIGS. 20A and 20B.

FIGS. 21A and 21B depict one embodiment of removing the replacement gatestructure 15 and the remaining portion of the sacrificial semiconductormaterial 10 to form a first opening exposing the fin structures 5 and asecond opening exposing the dielectric surface 4, and forming afunctional gate structure 95 in the first and second openings that is indirect contact with a channel portion of the fin structures 5. FIG. 21Ais a side cross-sectional view through the fin structure 5, and FIG. 21Bis a side cross-sectional view through the portion of the structure fromwhich the sacrificial semiconductor material was removed. Thereplacement gate structure 15 may be removed with an etch that isselective to the fin structures 5, the dielectric spacer 80 and theinterlevel dielectric layer 60 to provide the first opening. In someembodiments, after removing the replacement gate structure 15, theremaining portion of the sacrificial semiconductor material 10 may beremoved to provide the second opening. In one embodiment, the remainingportion of the sacrificial semiconductor material 10 may be removed withan etch that is selective to the fin structures 5, the dielectric spacer80, the dielectric surface 4 and the interlevel dielectric layer 90.Further details regarding the etch processes for removing thereplacement gate structure 15 and the remaining sacrificialsemiconductor material 10 are discussed above with respect to the priorembodiments.

The functional gate structure 95 including the at least one functionalgate dielectric 96 and the at least one functional gate conductor 97that is depicted in FIGS. 21A and 21B is similar to the functional gatestructure 35 including the at least one functional gate dielectric 36and the at least one functional gate conductor 77 that is describedabove with reference to FIGS. 8A-8C. Therefore, the description of thefunctional gate structure 35 that is depicted in FIGS. 8A-8C is suitablefor the functional gate structure 95 depicted in FIGS. 21A and 21B.

Referring to FIGS. 21A and 21B, the dielectric spacer 80, e.g.,dielectric spacer 80 that is composed of a germanium-containing oxide,may extend from a first fin structure 5, e.g., fin structure 5 composedof silicon, to an adjacent fin structure 5, e.g., fin structure 5composed of silicon. The dielectric spacer 80 is present only on thesidewalls of the functional gate structure 95, but is not present on thesidewalls of the fin structures 5. The dielectric spacer 80 is in directcontact with the at least one functional gate dielectric layer 96 of thefunctional gate structure 95. The dielectric spacer 80 may have an uppersurface that is substantially coplanar with an upper surface of the finstructures 5. Referring to FIG. 21B, in one embodiment, the sidewall S4of the functional gate structure 95 is substantially perpendicular tothe upper surface of the dielectric surface 4, wherein the plane definedby the sidewall S4 of the functional gate structure 95 and a planedefined by an upper surface of the dielectric surface 4 intersect at anangle α3 of 90°+/−10°. In another embodiment, the plane defined by thesidewall S4 of the functional gate structure 95 and a plane defined byan upper surface of the dielectric surface 4 intersect at an angle α3 of90°+/−5°. In yet another embodiment, the plane defined by the sidewallS4 of the functional gate structure 95 and a plane defined by an uppersurface of the dielectric surface 4 intersect at an angle α3 of 90°.

In some embodiments, in the method described with reference to FIGS.1-4C, 11 and 18A-21B, in which the dielectric fin caps 6 are removedfrom the fin structures 5, the at least one functional gate dielectric96 is in direct contact with a sidewall and an upper surface for each ofthe fin structures 5, and the semiconductor device that is formed by themethod is a tri-gate semiconductor device. In other embodiments, in themethod described with reference to FIGS. 1-4C, 11 and 18A-21B, in whichthe dielectric fin caps 6 are not removed from the upper surface of thefin structures 5, the at least one functional gate dielectric 96 is indirect contact with a sidewall for each of the fin structures 5 and isseparated from an upper surface for each of the fin structures 5 by thedielectric fin cap. In this embodiment, the semiconductor device is afinFET semiconductor device.

While the present disclosure has been particularly shown and describedwith respect to preferred embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in formsand details may be made without departing from the spirit and scope ofthe present invention. It is therefore intended that the presentinvention not be limited to the exact forms and details described andillustrated, but fall within the scope of the appended claims.

What is claimed is:
 1. A semiconductor device comprising: at least twofin structures present on a substrate surface; a gate structure presenton the at least two fin structures, wherein the gate structure includesat least one high-k gate dielectric that is in direct contact with atleast the sidewalls of the two fin structures, and at least one gateconductor on the at least one high-k gate dielectric; a dielectricspacer having a dielectric constant that is less than the dielectricconstant of the high-k gate dielectric, the dielectric spacer extendsfrom a first fin structure to an adjacent fin structure and has an uppersurface that is substantially coplanar with an upper surface of the atleast two fin structures, wherein an entirety of a first sidewallsurface of the dielectric spacer is in direct contact with the at leastone high-k gate dielectric of the gate structure; and an epitaxialsemiconductor material in direct contact with the at least two finstructures and separated from the gate structure by the dielectricspacer, wherein an entirety of a second sidewall surface of thedielectric spacer that is opposite the first sidewall surface directlycontacts a sidewall surface of the epitaxial semiconductor material andwherein a bottommost surface of the dielectric spacer is coplanar with abottommost surface of the high-k gate dielectric.
 2. The semiconductordevice of claim 1, wherein the gate structure has a sidewall that isperpendicular to the substrate surface.
 3. The semiconductor device ofclaim 1, wherein the epitaxial semiconductor material provides a sourceregion and a drain region to the semiconductor device.
 4. Thesemiconductor device of claim 1, wherein the at least one high-k gatedielectric is in direct contact with a sidewall and an upper surface foreach of the at least two fin structures, and the semiconductor device isa tri-gate semiconductor device.
 5. The semiconductor device of claim 2,wherein a dielectric fin cap is present on the upper surface of each ofthe at least two fin structures, the at least one high-k gate dielectricis in direct contact with a sidewall for each of the at least two finstructures and is separated from an upper surface for each of the atleast two fin structures by the dielectric fin cap, and thesemiconductor device is a finFET semiconductor device.
 6. Thesemiconductor structure of claim 1, wherein a topmost surface of thedielectric spacer is coplanar with a topmost surface of the epitaxialsemiconductor material.
 7. The semiconductor structure of claim 1,wherein the dielectric spacer has a width from 2 nm to 10 nm.
 8. Thesemiconductor structure of claim 1, wherein the functional gatestructure is in direct contact with the dielectric spacer.
 9. Thesemiconductor structure of claim 1, wherein the substrate is adielectric material.
 10. The semiconductor structure of claim 1, whereinthe substrate comprises a semiconductor material.
 11. The semiconductorstructure of claim 1, wherein the two fin structures comprises acrystalline semiconductor material.
 12. The semiconductor structure ofclaim 1, wherein each of the fin structures comprise a firstsemiconductor material and the epitaxial semiconductor materialcomprises a second semiconductor material that differs in compositionfrom the first semiconductor material.
 13. The semiconductor structureof claim 1, wherein the first semiconductor material comprises silicon,and the second semiconductor material comprises silicon germanium orgermanium.
 14. The semiconductor structure of claim 1, wherein theepitaxial semiconductor merges the two fin structures.
 15. Thesemiconductor structure of claim 1, wherein the at least one high-k gatedielectric has a dielectric constant from 10 to 40, and the dielectricspacer has a dielectric constant from 3 to 7.